This is a APT12080LVR model product, with a maximum working voltage of 1200V, a maximum continuous current of 16A and a maximum on-resistance of 0.800 ohms.
This document provides technical specifications and characteristics for the APT12080LVR, a high voltage N-Channel enhancement mode Power MOS V® device. The technology minimizes the JFET effect to reduce on-resistance and achieves faster switching speeds through an optimized gate layout.
The datasheet details maximum ratings including 1200V drain-source voltage and 16A continuous current, along with static electrical characteristics such as on-state resistance (0.8 Ohms typical) and breakdown voltage. It also covers dynamic characteristics like input/output capacitance, switching times, and thermal properties for the TO-264 package.
| Continuous Drain Current | 16 Amps |
|---|---|
| Pulsed Drain Current | 64 Amps |
| Drain-Source On-State Resistance | 0.800 Ohms |
| Total Power Dissipation | 520 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Package Type | TO-264 Package |
The typical drain-source on-state resistance at Vgs = 10V and Id = 0.5A is 0.800 Ohms.
Yes, the device features 100% Avalanche Tested capability.
The operating and storage junction temperature range is from -55 to 150 degrees Celsius.