This document is the technical data sheet of APT12067JLL, mainly introduces its electrostatic characteristics, maximum ratings, static electrical characteristics and other parameters
This document is a technical datasheet for the APT12067JLL, an N-Channel enhancement mode power MOSFET from Advanced Power Technology. The device belongs to the Power MOS 7™ series and utilizes a patented metal gate structure (IsoTOP®) designed for low loss and high voltage applications.
| Drain-Source Voltage | 1200 Volts |
|---|---|
| Continuous Drain Current | 17 Amps |
| Pulsed Drain Current | 68 Amps |
| Total Power Dissipation | 460 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Package Type | SOT-227 |
The maximum continuous drain current is 17 Amps when the temperature is 25°C.
The total power dissipation is 460 Watts at a temperature of 25°C.
The operating and storage junction temperature range is from -55 to 150 C.