This is a SOT-227-packaged GDS® ISOTOP® high-voltage Schottky diode with a maximum reverse voltage of 1,500V and a maximum forward current of 10A.
This document is a datasheet for the Advanced APT12080JVR, a high voltage N-Channel enhancement mode power MOSFET. The device features a new technology that minimizes the JFET effect, increases packing density, and reduces on-resistance while achieving faster switching speeds through an optimized gate layout. It is available in a popular SOT-227 (ISOTOP) package and is UL Recognized.
The datasheet provides comprehensive maximum ratings, static electrical characteristics, and dynamic characteristics for the device. It includes detailed information on the internal body diode, thermal characteristics, and package specifications. The document also features various graphs illustrating output characteristics, transfer characteristics, and safe operating areas.
| Drain-Source Voltage | 1200 Volts |
|---|---|
| Continuous Drain Current | 15 Amps |
| Pulsed Drain Current | 60 Amps |
| Gate-Source Voltage (Continuous) | +30 Volts |
| Total Power Dissipation | 450 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Drain-Source On-State Resistance | 0.800 Ohms |
| Package Type | SOT-227 (ISOTOP) |
The maximum drain-source voltage is 1200 Volts.
The continuous drain current is 15 Amps at a junction temperature of 25°C.
The device uses a popular SOT-227 package.