This datasheet provides data of APT1001R, including maximum voltage, maximum current, maximum power dissipation, etc.
This document provides technical specifications for the Advanced Power Technology APT1001RBLC and APT1001RSLC power MOSFETs. These devices are described as a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs designed to deliver exceptionally fast switching speeds.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current @ Tg = 25°C | 11 Amps |
| Pulsed Drain Current | 44 Amps |
| Gate-Source Voltage Continuous | +30 Volts |
| Total Power Dissipation @ Tg = 25°C | 280 Watts |
| Operating and Storage Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance @ (Vgg = 10V, 0.5 lorconty) | 1.00 Ohms |
| Gate Threshold Voltage | 3 to 5 Volts |
The device supports a continuous drain current of 11 Amperes when the junction temperature is 25°C.
The device operates and stores within a range of -55 to 150 degrees Celsius.
The part can dissipate up to 280 Watts when the junction temperature is 25°C.