FDP80N06 is a N-channel enhancement mode power field effect transistor produced by Fairchild. Its features are RDS(on) = 8.5mΩ (Typ.)@ VGS = 10V, ID = 40A, low gate charge(Typ. 57nC), low Crss(Typ. 145pF), fast switching, improved dv/dt capability and RoHS compliant.
This document is a technical datasheet for the Fairchild FDP80N06 UniFET™ N-Channel enhancement mode power field effect transistor. Produced using proprietary planar stripe DMOS technology, this device is designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability.
| Drain to Source Voltage (VDSS) | 60 V |
|---|---|
| Gate to Source Voltage (VGSS) | ±20 V |
| Continuous Drain Current (TC = 25°C) | 80A |
| Power Dissipation (TC = 25°C) | 176 W |
| Operating Temperature Range | -55 to +175°C |
The device can dissipate up to 176 W at a case temperature of 25°C.
The device operates and stores within a temperature range of -55 to +175°C.