FDP7N50/FDPF7N50 500V N-Channel MOSFET is a N-Channel enhancement mode power field effect transistor produced by Fairchild. It features 7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V, low gate charge (typical 12.8 nC), low Crss (typical 9 pF), fast switching, 100% avalanche tested, and improved dv/dt capability.
This datasheet describes the Fairchild FDP7N50 and FDPF7N50, which are 500V N-Channel enhancement mode power field effect transistors produced using the proprietary UniFET™ technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them well-suited for high-efficiency switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 7 A |
| Continuous Drain Current (Tc = 100°C) | 4.2 A |
| Pulsed Drain Current | 28 A |
| Total Gate Charge | 12.8 nC (Typical) |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 1.4 °C/W |
The operating and storage temperature range is from -55 to +150 °C.