FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET are N-channel enhancement mode power field effect transistors produced by Fairchild Semiconductor Corporation. The device is produced using Fairchild's proprietary planar stripe DOMS technology and has low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche testing, improved dv/dt capability, ESD improved capability and RoHS compliance.
This document is a datasheet for the FDP7N60NZ and FDPF7N60NZ N-Channel enhancement mode power field effect transistors. These devices are produced using Fairchild's proprietary planar stripe, DOMS technology and are designed for high efficient switched mode power supplies and active power factor correction.
| Drain to Source Voltage | 600 V |
|---|---|
| Drain Current - Continuous (TC = 25°C) | 6.5 A |
| Operating and Storage Temperature Range | -55 to +150°C |
| Package Type | TO-220 / TO-220F |
The device supports a continuous drain current of 6.5 A when the case temperature is 25°C.
These devices operate between -55°C and +150°C and can be stored within the same range.
The maximum rated drain-to-source breakdown voltage is 600 V.