This document describes the features and characteristics of the FDP65N06 60V N-Channel MOSFET product released by Fairchild Semiconductor Corporation in June 2006. It includes 65A current, 60V voltage, low gate charge, fast switching, and improved dv/dt capability.
This document is a technical datasheet for the Fairchild Semiconductor FDP65N06, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key specifications include a drain-source voltage rating of 60V and a continuous drain current of 65A at 25°C. It features a low static drain-source on-resistance (RDS(on)) of 0.016 Ω, low gate charge, and improved dv/dt capability, making it suitable for high-efficiency switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage (VDSS) | 60 V |
|---|---|
| Continuous Drain Current (ID) @ TC = 25°C | 65 A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.016 Ω @ VGS = 10 V |
| Operating and Storage Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 65 A when the case temperature is 25°C.
The maximum drain-source voltage rating is 60 V.
The maximum power dissipation is 135 W at a case temperature of 25°C.