FDN5618P is a P-channel MOSFET produced by Fairchild, with a rated voltage of 60V, a drain current of -1.25A, a fast switching speed and low RDS(ON), suitable for power management, DC-DC converters and load switches.
The document describes the Fairchild FDN5618P, a 60V P-Channel MOSFET utilizing the high voltage PowerTrench process. It is specifically optimized for power management applications such as DC-DC converters and load switches.
Key features include fast switching speed and high performance trench technology designed to achieve extremely low on-resistance (Rds(on)). The device is available in a SuperSOT™3 package.
| Drain-Source Voltage | -60 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | -1.25 A |
| Pulsed Drain Current | -10 A |
| Maximum Power Dissipation | 0.5 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 250 °C/W |
| Thermal Resistance (Junction-to-Case) | 75 °C/W |
The device is optimized for power management applications including DC-DC converters and load switches.
The maximum continuous drain current rating is -1.25 A.