Fairchild Semiconductor FDN86246 N-Channel MOSFET Datasheet

This document describes the features and characteristics of FDN86246 N-Channel PowerTrench® MOSFET, including maximum rDS(on) values, high-performance trench technology, high power and current handling capability, etc.

Brand: Fairchild
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 6
File format: PDF
File size: 158 KB
Published: 11 July, 2012
Updated: 29 September, 2023
MD5 checksum: 7C5B7F4C70A0D4D4537E6A146E5B18AF
PDF: Fairchild Semiconductor FDN86246 N-Channel MOSFET Datasheet PDF

About this manual

This document is a datasheet for the FDN86246, an N-Channel PowerTrench MOSFET produced by Fairchild Semiconductor. The device is designed for high performance with low on-resistance and fast switching speed, housed in a SuperSOT-3 surface mount package. It is RoHS compliant and 100% UL tested.

What's inside

Features
General Description
Maximum Ratings
Thermal Characteristics
Package Marking
Electrical Characteristics
Typical Characteristics
Tradeemarks
Disclaimer
Product Status Definitions

Specifications

Drain to Source Voltage	150 V

Frequently asked questions

What is the maximum drain to source voltage?

The maximum drain to source voltage is 150 V.

Is this product RoHS compliant?

Yes, the product is RoHS compliant.

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