This document introduces the FDN5630 model of N-Channel MOSFET product. This product uses Fairchild's PowerTrench technology, which has low RDS(ON) and fast switching characteristics, suitable for high-frequency DC/DC converters and motor drive applications.
This document is a technical datasheet for the Fairchild Semiconductor FDN5630, an N-Channel MOSFET utilizing PowerTrench technology. The device is specifically designed to enhance the overall efficiency of DC/DC converters by offering very low on-resistance (RDS(ON)) and fast switching characteristics within a small SOT23 footprint.
| Drain-Source Voltage | 60 V |
|---|---|
| Gate-Source Voltage | ±20 V |
| Operating Junction Temperature Range | -55 to +150 °C |
| Static Drain-Source On-Resistance @ VGS=10V | 0.100 Ω |
| Package Type | SOT23 (SuperSOT-3) |
It is designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
The device utilizes Fairchild's PowerTrench technology.
The maximum continuous drain current rating is 1.7 A.