FDP040N06 is a N-Channel MOSFET produced by Fairchild Semiconductor. Its maximum feature is RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A, with fast switching speed, low gate charge, high performance trench technology and extremely low RDS(on), suitable for DC to DC converters/synchronous rectification applications.
The document describes the N-Channel PowerTrench MOSFET model FDPO40N06 manufactured by Fairchild Semiconductor. It is designed with advanced technology to minimize on-state resistance while maintaining superior switching performance for applications such as DC-to-DC converters and synchronous rectification.
Key specifications include a drain-to-source voltage rating of 60V, a continuous drain current of up to 168A (silicon limited), and an extremely low static drain-to-source on-resistance. The datasheet details electrical characteristics like capacitance, gate charge, and switching times, along with typical performance curves for resistance, breakdown voltage, and thermal response.
| Drain to Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Silicon Limited) | 168 A |
| Static Drain to Source On Resistance | 4.0 mQ |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Package Type | TO-220 |