FDP047N08 is an N-Channel PowerTrench MOSFET power field-effect transistor. It features low on-state resistance, fast switching speed, low gate charge, and high-performance trench technology.
This document is a technical datasheet for the Fairchild Semiconductor FDP047N08 N-Channel PowerTrench MOSFET. The device utilizes advanced PowerTrench technology to achieve low on-state resistance (RDS(on)) while maintaining superior switching performance. It is designed for high power and current handling applications.
| Drain to Source Voltage (VDSS) | 75 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 164 A |
| Static Drain to Source On Resistance (Typ.) | 3.8 mΩ |
| Operating Temperature Range | -55 to +175°C |
The maximum continuous drain current (TC = 25°C) is 164 A.
It is intended for use in DC to DC converters and synchronous rectification.