FDP2710 250V N-Channel PowerTrench MOSFET is a N-channel MOSFET device produced by Fairchild Semiconductor. It is manufactured using Fairchild Semiconductor's advanced PowerTrench process and has low RDS(on) and fast switching speed.
This document is a technical datasheet for the Fairchild Semiconductor FDP2710, an N-Channel MOSFET produced using the advanced PowerTrench process. The device features a 50A continuous drain current at 25°C and a breakdown voltage of 250V.
| Drain-Source Voltage (Vdss) | 250 V |
|---|---|
| Gate-Source Voltage (Vgs) | +30 V |
| Continuous Drain Current (Tj=25°C) | 50 A |
| Single Pulsed Avalanche Energy | 145 mJ |
| Power Dissipation (Tc=25°C) | 260 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Case) | 0.48 °C/W |
The device is available in a TO-220 package.
Yes, the product is RoHS compliant.