This document describes the features and characteristics of the FDP3651U N-Channel PowerTrench® MOSFET, including its rDS(on), Qg(TOT), Miller Charge, Qrr Body Diode, etc. The product is suitable for applications such as DC/DC converters and Off-Line UPS, distributed power architectures and VRMs, primary switches for 24V and 48V systems, and high voltage synchronous rectifiers.
This document is a datasheet for the Fairchild FDP3651U, an N-Channel PowerTrench MOSFET rated for 100V, 80A continuous drain current, and 15mΩ on-resistance. It is designed for applications such as DC/DC converters, off-line UPS, and high voltage synchronous rectifiers.
The datasheet provides comprehensive electrical characteristics including off-state breakdown voltage, on-state resistance, gate charge, and switching times. It also includes typical performance graphs for on-resistance versus temperature and current, capacitance characteristics, and safe operating areas.
| Drain to Source Voltage | 100 V |
|---|---|
| Gate to Source Voltage | +20 V |
| Pulsed Drain Current | 320 A |
| Power Dissipation | 255 W |
| Operating Temperature | -55 to 175 °C |
| On Resistance (Typ) | 15 mΩ |
| Total Gate Charge (Typ) | 49 nC |
The operating and storage temperature range is -55 to 175 °C.
The device supports a continuous drain current of 80 A and a pulsed drain current of 320 A.
The maximum power dissipation is rated at 255 W.