FDP33N25 / FDPF33N25T 250V N-Channel MOSFET is a low on-state resistance, low gate charge, low input capacitance power field effect transistor.
This document provides technical specifications for the Fairchild Semiconductor FDP33N25 and FDPF33N25T, which are 250V N-Channel enhancement mode power field effect transistors. These devices utilize proprietary UniFET technology to minimize on-state resistance and provide superior switching performance suitable for high-efficiency switched mode power supplies.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 33 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220 / TO-220F |
| Total Gate Charge (Typical) | 36.8 nC |
The device operates and stores between -55°C and +150°C.