FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ features low Miller Charge, low Qrr Body Diode, UIS Capability (Single Pulse and Repetitive Pulse)
This document is a technical datasheet for the Fairchild Semiconductor FDP42AN15A0 and FDB42AN15A0 N-Channel PowerTrench MOSFETs. The devices are rated at 150V, 35A continuous drain current, and feature an on-resistance (Rds(on)) of 86mΩ typical.
| Drain to Source Voltage (Vdss) | 150 V |
|---|---|
| Continuous Drain Current (Tj=25°C, Vgs=10V) | 35 A |
| On-Resistance (Rds(on)) Typical | 86 mΩ |
| Total Gate Charge (Qg) | 39 nC |
| Power Dissipation (Pd) | 150 W |
| Operating Temperature Range | -55 to 175 °C |
The maximum rated power dissipation is 150 W under specified conditions.