This document describes the features and characteristics of the FDMS86102LZ N-Channel Power Trench® MOSFET, including maximum on-state resistance, ESD protection level, and applications such as DC-DC conversion, inverter, and synchronous rectifier.
The document describes the Fairchild Semiconductor FDMS86102LZ, an N-Channel Power Trench MOSFET designed for applications such as DC-DC conversion, inverters, and synchronous rectifiers. The device features a maximum drain current of 22A (continuous) and utilizes advanced process technology to minimize on-state resistance while maintaining superior switching performance.
| Drain to Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (Package limited) | 22 A |
| Continuous Drain Current (Silicon limited) | 37 A |
| Power Dissipation (Ta = 25°C) | 69 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 22 A when the temperature is 25°C.
The maximum power dissipation is 69 W at a junction temperature of 25°C.
The operating and storage junction temperature range is from -55 to +150 °C.