FDMS86200 N-Channel Power Trench® MOSFET is a high performance power MOSFET produced by Fairchild Semiconductor. It uses the advanced Power Trench® process to achieve low on-state resistance and high switching speed. It is suitable for DC-DC conversion applications.
The document describes the Fairchild Semiconductor FDMS86200, an N-Channel Power Trench MOSFET designed for DC-DC conversion applications. It features a low on-state resistance of 18 mΩ and is available in a robust MSL1 package design. The device is RoHS compliant and undergoes 100% UL testing.
The datasheet details maximum ratings, electrical characteristics, and typical performance graphs including on-resistance, gate charge, and safe operating areas. It also includes dimensional outlines and pad layout recommendations for the Power 56 package.
| On-Resistance | 18 mΩ |
|---|
The maximum continuous drain current is 49 A when the package is limited at a temperature of 25°C.
The maximum power dissipation is 104 W when the temperature is 25°C.
The operating and storage junction temperature range is from -55 to +150 °C.