The FDMS86105 is an N-Channel PowerTrench® MOSFET power field-effect transistor. This product features a maximum rDS(on) of 34 mΩ (at VGS = 10 V, ID = 6 A) and a maximum rDS(on) of 54 mΩ (at VGS = 6 V, ID = 4.5 A). It utilizes an advanced package and silicon combination for low rDS(on) and high efficiency. The product is 100% UIL tested and RoHS compliant.
The document describes the Fairchild Semiconductor FDMS86105, an N-Channel PowerTrench MOSFET rated at 100 V, 26 A continuous drain current (silicon limited), and 34 mΩ on-resistance. It is designed for primary and secondary DC-DC applications as well as load switches.
The datasheet details maximum ratings such as a junction temperature range of -55 to +150 °C and power dissipation up to 48 W at 25 °C. It includes comprehensive electrical characteristics tables covering off-state, on-state, dynamic, switching, and diode parameters, along with typical characteristic curves for resistance, capacitance, and thermal response.
| Drain to Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (Silicon Limited) | 26 A |
| Power Dissipation (Ta = 25°C) | 48 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
The device is suitable for primary DC-DC, secondary DC-DC, and load switch applications.
Yes, the document lists it as RoHS Compliant.