FDMS86103L N-Channel Power Trench® MOSFET is a 100 V, 49 A, 8 mΩ N-channel MOSFET with the following features: Max RDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A; Max RDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A; Advanced package and silicon combination for low RDS(on) and high efficiency; MSL1 robust package design; 100% UIL tested; RoHS Compliant.
This document is a technical datasheet for the Fairchild Semiconductor FDMS86103L, an N-Channel PowerTrench MOSFET. The device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for DC-DC conversion applications.
Key specifications include a maximum drain current of 49A (package limited) and a drain-to-source voltage rating of 100V. The datasheet provides detailed electrical characteristics, thermal data, typical performance curves, and dimensional outlines for the Power56 package.
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| Continuous Drain Current (Package limited) | 49 A |
| Continuous Drain Current (Silicon limited) | 81 A |
| Power Dissipation (Tc = 25°C) | 104 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case (RθJC) | 1.2 °C/W |
The continuous drain current is limited by the package to 49A at Tc = 25°C.
Yes, the datasheet lists 'RoHS Compliant' in the features section.