This document describes the features and characteristics of the FDMS86104 N-Channel PowerTrench® MOSFET, including maximum on-state resistance, advanced package and silicon combination, MSL1 robust package design, 100% UIL testing, and RoHS compliance.
This document is a datasheet for the Fairchild Semiconductor FDMS86104, an N-Channel PowerTrench MOSFET rated for 100 V and 16 A continuous drain current. It is designed for DC-DC conversion applications and features a robust MSL1 package design with RoHS compliance.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltage, on-state resistance, and switching parameters. It also includes typical performance graphs for capacitance, thermal response, and safe operating areas, along with dimensional outlines for the Power 56 package.
| Drain to Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Package limited) | 16 A |
| Continuous Drain Current (Silicon limited) | 39 A |
| Power Dissipation (Ta = 25°C) | 73 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.7 °C/W |
| Package Type | Power 56 |
The maximum continuous drain current is 16 A when package limited at Ta = 25°C.
Yes, the device is RoHS Compliant.
The static drain to source on resistance is typically 24 mΩ at Vgs = 10 V and Id = 7 A.