FDP61N20 is a 200V N-Channel MOSFET with features such as 61A, 200V, RDS(on) = 0.041Ω @VGS = 10V
The document describes the Fairchild FDP61N20, a 200V N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. Key features include a 61A continuous drain current, low on-state resistance of 0.041 Ω, and fast switching capabilities suitable for high-efficiency switched mode power supplies and active power factor correction.
| Drain-Source Voltage | 200 V |
|---|---|
| On-Resistance | 0.041 Ω |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
The device can withstand a single pulsed avalanche energy of up to 1440 mJ.
The device operates and can be stored within a temperature range of -55 to +150 °C.