The FDN308P is a N-channel MOSFET from Fairchild Semiconductor Corporation. It is specified for 2.5V operation and has a maximum current of 1.5A. It features a fast switching speed and is manufactured using Fairchild's advanced PowerTrench process. It is suitable for use in power management, load switching, and battery protection applications.
This document provides technical specifications for the Fairchild FDN308P, a P-Channel MOSFET utilizing the advanced PowerTrench process. The device is designed for power management applications with a specified gate drive voltage range of 2.5V to 12V.
Key features include fast switching speed and the SuperSOT-3 package, which offers low on-resistance and higher power handling capability compared to SOT23 in the same footprint. The datasheet details electrical characteristics such as drain-source breakdown voltage, on-resistance, and thermal resistance.
| Drain-Source Voltage | -20 V |
|---|---|
| Continuous Drain Current | -1.5 A |
| Maximum Power Dissipation | 0.5 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | SuperSOT-3 |
The device supports a continuous drain current of -1.5 A and a pulsed drain current of -10 A.
The device operates and stores within a junction temperature range of -55 to +150 °C.