FDN306P/336P is a single P-channel 2.5V specified MOSFET produced by Fairchild Semiconductor Corporation. These devices are well suited for portable electronics applications such as load switching and power management, battery charging circuits and DC/DC conversion.
The document describes the FDN336P, a single P-Channel 2.5V specified PowerTrench MOSFET designed for portable electronics applications such as load switching, power management, and DC/DC conversion. It features a SuperSOT-3 package and utilizes advanced trench technology to minimize on-state resistance while maintaining low gate charge.
| Drain-Source Voltage | -20 V |
|---|---|
| Drain Current (Continuous) | -1.3 A |
| Maximum Power Dissipation | 0.5 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Gate Threshold Voltage | -0.4 to -0.9 V |
| Static Drain-Source On-Resistance | 0.12 to 0.2 Ω |
| Total Gate Charge | 3.6 nC (Typ) |
| Package Type | SuperSOT-3 |
These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.
The maximum continuous drain current is -1.3 A.
The device uses the SuperSOT-3 package.