This datasheet is about FDN340P, which is a single P-channel logic level MOSFET produced by Fairchild Semiconductor Corporation. This device has extremely low RDS(ON) (70mΩ@VGS=-4.5V) and low gate charge (7.2nC typical), which is suitable for load switching and power management, battery charging circuits and DC/DC conversion etc. portable electronic applications.
The document describes the Fairchild Semiconductor FDN340P, a single P-Channel Logic Level PowerTrench MOSFET. It is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance in portable electronics applications such as load switching and DC/DC conversion.
Key specifications include a drain-source voltage rating of -20V, a continuous drain current of -2A, and an on-resistance (Rds(on)) of 70 mΩ at Vgs = -4.5V. The device is housed in a SuperSOT-3 package with identical pin-out to the standard SOT-23 but offers 30% higher power handling capability.
| Drain-Source Voltage (Vdss) | -20 V |
|---|---|
| Gate-Source Voltage (Vgs) | +8 V |
| Continuous Drain Current (Id) | -2 A |
| Power Dissipation (Single Operation) | 0.5 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| On-Resistance (Vgs = -4.5V) | 70 mΩ |
| Total Gate Charge (Qg) | 7.2 nC |
These devices are well suited for portable electronics applications such as load switching, power management, battery charging circuits, and DC/DC conversion.