FDN357N is a N-channel logic level enhancement mode field effect transistor with extremely low RDS(ON), suitable for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits.
The document describes the Fairchild FDN357N as an N-channel logic level enhancement mode power field effect transistor produced using proprietary DMOS technology. It is designed for low voltage applications in notebook computers, portable phones, and other battery-powered circuits requiring fast switching and low power loss.
Key features include a standard SOT-23 SuperSOT-3 surface mount package with high cell density for extremely low on-resistance. The device supports continuous drain currents up to 1.9A and operates within a temperature range of -55°C to 150°C.
| Drain-Source Voltage (Vdss) | 30 V |
|---|---|
| Gate-Source Voltage (Continuous) | +20 V |
| Maximum Power Dissipation | 0.5 W |
| Operating Temperature Range | -55 to 150 °C |
| Thermal Resistance (Junction-to-Ambient) | 250 °C/W |
The device has a maximum drain-source voltage of 30 V.
It supports a continuous drain/output current of 1.9 A.
The maximum power dissipation is rated at 0.5 W.