This datasheet lists the data information of FDN342P, including absolute maximum ratings, electrical characteristics, package outlines and ordering information.
The FDN342P is a P-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. It is optimized for power management applications and supports a wide range of gate drive voltages from 2.5V to 12V. The device features a rugged gate rating and is packaged in an Enhanced power SuperSOT-3 (SOT-23) package.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | +12 V |
| Continuous Drain Current | -2 A |
| Pulsed Drain Current | -10 A |
| Power Dissipation | 0.5 W |
| Operating Junction Temperature | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 250 °C/W |
| Thermal Resistance (Junction-to-Case) | 75 °C/W |
| Package Type | SuperSOT-3 (SOT-23) |
It is optimized for power management applications such as load switches and battery protection.
The device is optimized for a wide range of gate drive voltages from 2.5V to 12V.
The maximum continuous drain current is -2 A.