The FDN359BN is an N-channel logic level MOSFET produced by Fairchild Semiconductor Corporation. This MOSFET uses Fairchild Semiconductor's advanced PowerTrench process, which minimizes the on-state resistance while maintaining superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The document describes the Fairchild FDN359BN, an N-Channel Logic Level MOSFET produced using the advanced PowerTrench process. It is designed for low voltage and battery-powered applications requiring low on-state resistance and fast switching speeds.
The device features a SuperSOT-3 package with identical pin-out to SOT-23 but offers 30% higher power handling capability. Key electrical characteristics include a maximum drain current of 2.7A, a breakdown voltage of 30V, and low gate charge typical values.
| Drain-Source Voltage (Vss) | 30 V |
|---|---|
| Maximum Continuous Drain Current | 2.7 A |
| Package Type | SuperSOT-3 |
| Operating Temperature Range | -55 to +150 °C |
The typical on-state resistance (Rds(on)) is 0.060 Ω when Vgs is 4.5V.
Yes, it has an identical pin-out to SOT-23.