Motorola MMSF4N01HD MOSFET Designer's Data Sheet

Motorola TMOS Power MOSFET Transistor Device Data is a document that introduces the device data of Motorola's TMOS power MOSFET transistors. The document describes the features and characteristics of the MiniMOS series products, including ultra-low RDS(on) and true logic level performance, as well as the ability to withstand high energy in avalanche and commutation modes. These products are designed for low voltage, high speed switching applications and are suitable for power management and DC-DC converters.


Motorola MMSF4N01HD MOSFET Designer's Data Sheet - cover page
Brand
Motorola
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
232 KB
Published
11 July, 2012
Updated
28 September, 2023
MD5 checksum
2D20384C3221DA0FB7A2B1E74E21A642

About this manual

This document is a Designer's Data Sheet for the Motorola MMSF4N01HD, a medium power surface mount N-channel enhancement mode field effect transistor (TMOS). The device utilizes Motorola's High Cell Density HDTMOS process to achieve ultra-low on-resistance and logic-level gate drive capabilities. It is designed for low voltage, high speed switching applications such as DC-DC converters, power management in portable electronics, and motor controls.

The datasheet provides comprehensive electrical characteristics including maximum ratings, static and dynamic parameters, and source-drain diode specifications. Typical values are listed alongside minimums and maximums for various conditions at 25°C. The document also includes typical performance curves illustrating on-resistance versus gate voltage, transfer characteristics, and capacitance variations.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Typical Electrical Characteristics
  • Power MOSFET Switching Theory
  • Capacitance Variation
  • Device Marking
  • Ordering Information
  • Thermal Resistance

Specifications

Drain-to-Source Voltage (Vdss)20 Vdc
Continuous Drain Current @ Ta = 25°C5.8 Adc
Static Drain-Source On-Resistance (Typical)0.045 Ohm
Total Power Dissipation @ Ta = 25°C25 Watts
Operating and Storage Temperature Range-55 to 150 °C
Input Capacitance (Typical)425 pF
Turn-On Delay Time (Typical, Vgs=10V)13 ns

Frequently asked questions

What is the typical on-resistance of the MMSF4N01HD?

The typical static drain-source on-resistance (RDS(on)) is 0.045 Ohms at Vgs = 4.5V and Id = 4.0A.

Is the MMSF4N01HD logic level?

Yes, it features true logic level performance and can be driven by logic ICs.

What is the package type for this device?

The device uses a Miniature SO-8 Surface Mount Package (Case 751-05, Style 13).

What are the typical applications for this MOSFET?

Typical applications include DC-DC converters and power management in portable products like computers, printers, and cellular phones.

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