The MiniMOS series MOSFETs are high performance power devices featuring ultra low RDS(on) and true logic level performance. They are designed for use in power applications such as dc-dc converters and power management in portable and battery powered products such as computers, printers, mobile phones.
This document is a Designer's Data Sheet for the Motorola MMSF4NO1HD, a MiniMOS single N-channel MOSFET. The device utilizes the High Cell Density HDTMOS process to provide ultra-low on-resistance and true logic-level performance suitable for low-voltage, high-speed switching applications.
Key specifications include a maximum drain-to-source voltage of 20V and a continuous drain current of 5.8A at 25°C. The device is housed in a miniature SO-8 surface mount package (Case 751-05, Style 13) and is designed for use in power management, DC-DC converters, and motor controls.
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drain Current — Continuous @ Ta = 25°C | 5.8 A |
| Total Power Dissipation @ Ta = 25°C | 25 Watts |
| Operating and Storage Temperature Range | -55 to 150 °C |
| Package Type | SO-8 Surface Mount |
The maximum continuous drain current at 25°C is 5.8 Amperes.
The device can withstand a maximum drain-to-source voltage of 20 Volts.