Motorola TMOS Power MOSFET Transistor Device Data introduces a series of medium power surface mount products with the brand's High Cell Density HDTMOS process. These MiniMOS devices have ultra low RDS(on) and true logic level performance. They can handle high energy in avalanche and commutation modes and have a low reverse recovery time for the drain-to-source diode. They are designed for low voltage, high speed switching applications where power efficiency is important. Typical applications include dc-dc converters and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The document also specifies the avalanche energy and provides mounting information for the SO-8 package.
This document is a Designer's Data Sheet for the Motorola MMSF3P02HD, a single P-Channel MiniMOS field effect transistor. The device utilizes Motorola's High Cell Density HDTMOS process and is designed for low voltage, high speed switching applications where power efficiency is important. Typical applications include DC-DC converters, power management in portable products, and low voltage motor controls.
| Drain-to-Source Voltage | 20 Vdc |
|---|---|
| Drain Current — Continuous @ Ta = 25°C | 5.6 Adc |
| Operating and Storage Temperature Range | - 55 to 150 °C |
| Ultra Low RDS(on) | 0.075 Ohm |
| Package Type | SO-8 Surface Mount |
Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
Yes, it features true logic level performance and can be driven by logic ICs.