Fairchild FDD850N10L N-Channel MOSFET Datasheet

This document provides the maximum ratings and thermal characteristics of the FDD850N10L N-Channel PowerTrench® MOSFET, as well as describes its features and characteristics.


Fairchild FDD850N10L N-Channel MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
320 KB
Published
11 July, 2012
Updated
28 September, 2023
MD5 checksum
10CDFDA4317ECD9C2C1F8BA3EEC8CA6C

About this manual

The document describes the N-Channel PowerTrench MOSFET model FDD850N10L manufactured by Fairchild Semiconductor. Key features include a low on-state resistance of 75mΩ (typical), low gate charge, and RoHS compliance. The device is designed for applications such as DC to DC converters and synchronous rectification.

The datasheet details maximum ratings including a drain-to-source voltage of 100V and continuous drain current up to 15.7A at 25°C. It also lists electrical characteristics like input capacitance, total gate charge, and switching times, along with typical performance curves for on-resistance, breakdown voltage, and thermal response.

What's inside

  • Features Description
  • MOSFET Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Performance Characteristics
  • Gate Charge Test Circuit
  • Resistive Switching Test Circuit
  • Mechanical Dimensions

Specifications

Drain to Source Voltage100 V
Continuous Drain Current (25°C)15.7 A
Power Dissipation (25°C)50 W
On-Resistance (Typical)75 mΩ
Package TypeD-PAK

Frequently asked questions

What are the recommended applications for this MOSFET?

The device is suitable for DC to DC converters and synchronous rectification.

Is this product RoHS compliant?

Yes, the datasheet states that the product is RoHS Compliant.

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