FDD86252 N-Channel PowerTrench® MOSFET is a N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its main features are low on-state resistance and superior switching performance.
This document is a datasheet for the Fairchild Semiconductor FDD86252, an N-Channel PowerTrench MOSFET rated for 150 V and 27 A. It utilizes the PowerTrench process to minimize on-state resistance while maintaining superior switching performance. The device is RoHS compliant and is primarily intended for DC-DC conversion applications.
| Drain to Source Voltage | 150 V |
|---|---|
| Gate to Source Voltage | +20 V |
| Continuous Drain Current (Package limited) | 42 A |
| Continuous Drain Current (Silicon limited) | 27 A |
| Single Pulse Avalanche Energy | 72 mJ |
| Power Dissipation (Te = 25°C) | 89 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 14 °C/W |
| Package Type | D-PAK (TO-252) |
Yes, the datasheet lists the device as RoHS Compliant.
The maximum continuous drain current is 27 A when silicon limited at Te = 25°C.