Fairchild Semiconductor FDD86250 N-Channel MOSFET Datasheet

FDD86250 N-Channel PowerTrench® MOSFET is produced by Fairchild Semiconductor Corporation. It is a N-channel MOSFET with a maximum on-state resistance of 22 mΩ and a rated voltage of 150 V. The maximum current is 50 A and it is used for DC - DC conversion.


Fairchild Semiconductor FDD86250 N-Channel MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
374 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
C4FC0F86E168537B66FB9D768ED3FDC2

About this manual

The document describes the Fairchild Semiconductor FDD86250, an N-Channel MOSFET produced using the PowerTrench process. It is designed to minimize on-state resistance while maintaining superior switching performance and is RoHS compliant. The device is available in a D-PAK (TO-252) package.

What's inside

  • Features
  • General Description
  • Application
  • MOSFET Maximum Ratings
  • Thermal Characteristics
  • Package Marking and Ordering Information
  • Electrical Characteristics
  • Typical Characteristics

Specifications

Drain to Source Voltage150 V
Drain Current - Continuous (Package limited)50 A
Drain Current - Continuous (Silicon limited)51 A
Power Dissipation (Tc = 25°C)132 W
Thermal Resistance, Junction to Case0.94 °C/W
Package TypeD-PAK (TO-252)

Frequently asked questions

What is the maximum continuous drain current for this MOSFET at 25°C?

The maximum continuous drain current is 50 A when the case temperature is 25°C.

What is the maximum power dissipation at a case temperature of 25°C?

The maximum power dissipation is 132 W when the case temperature is 25°C.

What is the operating and storage junction temperature range?

The operating and storage junction temperature range is -55 to +150 °C.

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