FDD86113LZ N-Channel PowerTrench® MOSFET is a high-performance MOSFET product with low on-state resistance, high power, and current handling capability. It is produced using advanced Power Trench® process.
This document is a datasheet for the Fairchild Semiconductor FDD86113LZ, an N-Channel logic level MOSFET produced using the PowerTrench process. The device is rated for 100 V, 5.5 A continuous drain current, and 104 mΩ on-resistance at Vgs=10V.
| Continuous Drain Current (Package limited) | 5.5 A |
|---|---|
| Continuous Drain Current (Silicon limited) | 11.8 A |
| Power Dissipation | 29 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | D-PAK (TO-252) |