FDD86110 N-Channel PowerTrench® MOSFET is produced by Fairchild Semiconductor Corporation. It is a N-Channel MOSFET with a rated voltage of 100 V and a rated current of 50 A. The maximum on-state resistance is 10.2 mΩ, making it ideal for DC-DC conversion applications.
The document describes the Fairchild FDD86110, an N-Channel PowerTrench® MOSFET rated at 100 V, 50 A continuous drain current (package limited), and 10.2 mΩ on-resistance. It is produced using Fairchild Semiconductor's advanced Power Trench process to minimize on-state resistance while maintaining superior switching performance.
The datasheet includes maximum ratings, electrical characteristics such as breakdown voltage, threshold voltage, and capacitance values, along with typical characteristic curves for on-resistance, transfer characteristics, gate charge, and thermal response. It also lists package marking information and ordering details.
| Drain to Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (Package limited) | 50 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 0.98 °C/W |
The maximum continuous drain current is 50 A when the device is package limited at a temperature of 25°C.
The maximum power dissipation is 127 W when the ambient temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to +150 °C.