FDD5353 N-Channel Power Trench® MOSFET 60V, 50A, 12.3mΩ is a high performance MOSFET product produced by Fairchild Semiconductor Corporation. It has excellent switching performance and low on-state resistance.
This document is a datasheet for the Fairchild FDD5353 N-Channel Power Trench MOSFET. It specifies key ratings including a maximum drain-to-source voltage of 60V and a continuous drain current of 50A. The device utilizes the Power Trench process to minimize on-state resistance while maintaining switching performance.
| Drain to Source Voltage | 60 V |
|---|---|
| Gate to Source Voltage | ±20 V |
| Continuous Drain Current (Package limited) | 50 A |
| Continuous Drain Current (Silicon limited) | 54 A |
| Pulsed Drain Current | 100 A |
| Power Dissipation (TC = 25°C) | 69 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.8 °C/W |
| Thermal Resistance, Junction to Ambient | 40 °C/W |
| Static Drain to Source On Resistance (VGS = 10V) | 12.3 mΩ |
| Package Type | D-PAK (TO-252) |
The device is suitable for use in inverters, synchronous rectifiers, and as a primary switch MOSFET.
The maximum static drain to source on resistance is 12.3 mΩ at VGS = 10V and ID = 10.7A.
Yes, the device is RoHS compliant.