FDD6637 is a 35V P-Channel PowerTrench MOSFET produced by Fairchild Semiconductor. Its RDS(ON) is very low, only 11.6 mΩ @ VGS = –10 V. The device is packaged in TO-252 D-PAK.
This document provides technical specifications and characteristics for the Fairchild Semiconductor FDD6637, a P-Channel MOSFET utilizing proprietary PowerTrench technology. The device is designed to deliver low Rdson and optimized Bydss capability for applications such as inverters and power supplies.
Key features include a maximum continuous drain current of 55 A at 25°C, an on-resistance of 11.6 mΩ at Vgs = -10V, and RoHS compliance. The component is available in the D-PAK (TO-252) package.
| Drain-Source Voltage | -35 V |
|---|---|
| Continuous Drain Current @Tj=25°C | -55 A |
| Power Dissipation @Tc=25°C | 57 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Package Type | D-PAK (TO-252) |
Yes, the datasheet lists it as a feature.
The device is intended for use in inverters and power supplies.
The maximum continuous drain current is -55 A when the temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to +150 °C.