This document introduces the characteristics of the FCI25N60N_F102 MOSFET, including the minimum on-resistance, ultra-low gate charge, and low effective output capacitance.
This document is a technical datasheet for the Fairchild Semiconductor FCI25N60N_F102, an N-Channel MOSFET utilizing SupreMOS technology. The device is designed for high voltage super-junction applications including AC-DC SMPS requirements for PFC, server/telecom power, and industrial power systems.
The datasheet provides comprehensive electrical characteristics, typical performance curves, thermal data, and mechanical dimensions. Key specifications include a 600V drain-to-source breakdown voltage, a maximum continuous drain current of 25A at 25°C, and an ultra-low gate charge typical value of 57nC.
| Drain to Source Voltage (V(BR)DSS) | 600 V |
|---|---|
| Pulsed Drain Current | 75 A |
| Typical Gate Charge (Qg) | 57 nC |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 0.58 °C/W |
| Package Type | TO-262 (FCI25N60N_F102) |
The component can operate and be stored in a temperature range from -55 to +150 °C.
The maximum power dissipation is rated at 216 W when the case temperature is 25°C.