FCI7N60 600V N-Channel MOSFET is a new generation of high voltage MOSFET family developed by Fairchild Semiconductor, which utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This document is a datasheet for the Fairchild Semiconductor FCI7N60, a 600V N-Channel MOSFET utilizing the proprietary SuperFET technology. The device is designed for high-efficiency AC/DC power conversion in switching mode operations, featuring ultra-low gate charge and low effective output capacitance to minimize conduction loss.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 7 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Total Gate Charge | Typ. 30 nC |
| Effective Output Capacitance | Typ. 60 pF |
| Thermal Resistance, Junction-to-Case | 1.5 °C/W |
The FCI7N60 can handle a single pulsed avalanche energy of up to 230 mJ.