FCP11N60F/FCPF11N60F 600V N-Channel MOSFET is a high-performance MOSFET from Fairchild Semiconductor Corporation. It features low on-resistance (Typ. RDS(on) = 0.32Ω), fast recovery time (trr = 120ns), ultra low gate charge (typ. Qg = 40nC), low effective output capacitance (typ. Cosseff.=95pF), and is very suitable for various AC/DC power conversion.
This document is a technical datasheet for the Fairchild Semiconductor SuperFET™ family, specifically models FCP11N60F and FCPF11N60F. These are 600V N-channel MOSFETs designed with an advanced charge balance mechanism to minimize conduction loss and provide superior switching performance.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings for drain current, avalanche energy, and power dissipation. It details on-resistance values, capacitance parameters, and switching times such as turn-on delay and reverse recovery time. Additionally, it includes typical performance characteristic graphs and mechanical dimensions for both TO-220 and TO-220F packages.
| Single Pulsed Avalanche Energy | 340 mJ |
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The MOSFET can operate or be stored within a temperature range of -55 to +150 °C.
The component can withstand a single pulsed avalanche energy of 340 mJ.