This document describes the features and characteristics of Fairchild's SupreMOS TM FCP11N60N / FCPF11N60NT N-Channel MOSFET, including maximum voltage, maximum current, low resistance, etc.
The document describes the Fairchild SupreMOS FCP11N60N and FCPF11N60NT N-Channel MOSFETs, which utilize a deep trench filling process to provide superior switching performance and ruggedness. These devices are designed for high voltage AC-DC SMPS requirements in applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power.
| Package Type | TO-220 / TO-220F |
|---|
The maximum continuous drain current is 10.8 A when the case temperature is 25°C.
The maximum drain-to-source voltage rating is 600 V.
The thermal resistance from junction to case is 1.33 °C/W for the FCP11N60N model.