FCP13N60N / FCPF13N60NT N-Channel MOSFET features RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A, Ultra Low Gate Charge ( Typ.Qg = 30.4nC), Low Effective Output Capacitance and 100% Avalanche Tested.
This document is a datasheet for the Fairchild SupreMOS FCP13N60N and FCPF13N60NT N-channel MOSFETs. These devices utilize deep trench filling technology to provide superior switching performance and ruggedness suitable for AC-DC SMPS, server/telecom power, and industrial applications.
The datasheet provides maximum ratings, electrical characteristics including on-resistance and gate charge, typical performance graphs, and mechanical dimensions for the TO-220 and TO-220F packages. It also details test circuits and waveforms used to verify device parameters such as avalanche energy and diode recovery.
| Drain to Source Voltage (VDSS) | 600 V |
|---|---|
| Continuous Drain Current (ID) @ TC = 25°C | 13 A |
| Static Drain to Source On Resistance (RDS(on)) Typ. | 0.244 Ω |
| Operating Temperature Range | -55 to +150°C |
| Package Types | TO-220 / TO-220F |
The continuous drain current at TC = 25°C is 13A.
Yes, the datasheet states that the device is RoHS Compliant.
The devices are available in TO-220 and TO-220F packages.