FCP16N60N/FCPF16N60NT N-Channel MOSFET is a 600V, 16A, 0.170Ω super low resistance power MOSFET.
This document is a technical datasheet for the Fairchild Semiconductor SupreMOS series of high voltage super-junction MOSFETs. The specific models covered are the FCP16N60N (TO-220 package) and the FCPF16N60NT (TO-220F package). These devices utilize a deep trench filling process to provide superior switching performance, low effective output capacitance, and ruggedness for AC-DC SMPS applications such as PFC, server/telecom power, and industrial power supplies.
The datasheet provides comprehensive electrical characteristics including maximum ratings, off-state parameters like breakdown voltage temperature coefficient, on-state resistance, and dynamic characteristics such as input/output capacitances and gate charge. It also details switching times, drain-source diode reverse recovery properties, thermal resistance values for junction-to-case and case-to-ambient, and typical performance curves illustrating behavior under varying temperatures and currents.
| Drain to Source Voltage (V(BR)DSS) | 600 V |
|---|---|
| Continuous Drain Current at Tj=25°C | 16.0 A |
| Effective Output Capacitance (Typical) | 176 pF |
| Total Gate Charge at 10V (Typical) | 40.2 nC |
| Thermal Resistance Junction to Case | 0.93 °C/W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The static drain-to-source on resistance (RDS(on)) is typically 0.170 Ohms at VGS=10V and ID=8A.
Yes, the document states that the product is RoHS compliant.