FCP190N60 / FCPF190N60 N-Channel MOSFET is a 600V N-Channel MOSFET device from Fairchild Semiconductor Corporation. It has a maximum drain-source voltage of 600V and a maximum gate-source voltage of ±20V. The rated drain current is 20.2A, and the maximum drain current at 100°C is 12.7A. The device supports pulsed operation, with a maximum pulsed drain current of 60.6A. It also supports avalanche breakdown, with a maximum avalanche energy of 400mJ and a maximum avalanche current of 4A.
This document is a datasheet for the Fairchild Semiconductor FCP190N60 and FCPF190N60, which are 600V N-Channel MOSFETs utilizing the proprietary SuperFET II technology. The device is designed for high voltage switching applications, offering ultra-low gate charge and low on-resistance to minimize conduction loss and provide superior switching performance.
| Drain to Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (25°C) | 20.2 A |
| Single Pulsed Avalanche Energy | 400 mJ |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction to Case | 0.6 °C/W (FCP190N60) |
| Total Gate Charge | 57 nC (Typical) |
| Effective Output Capacitance | 160 pF (Typical) |
The device is rated for a maximum drain to source voltage of 600 V.
The maximum continuous drain current is 20.2 A at a junction temperature of 25°C.
The operating and storage temperature range extends up to +150 °C.