FCP22N60N/FCPF22N60NT N-Channel MOSFET is a high voltage super-junction MOSFET with ultra low gate charge and low effective output capacitance, suitable for PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
This document is a datasheet for the Fairchild SupreMOS FCP22N60N and FCPF22N60NT N-Channel MOSFETs. It describes the device as Fairchild's next generation of high voltage super-junction MOSFETs, utilizing a deep trench filling process to provide superior switching performance and ruggedness. The devices are designed to fit industry requirements for AC-DC SMPS, server/telecom power, FPD TV power, ATX power, and industrial power applications.
| Drain to Source Voltage | 600 V |
|---|---|
| Gate to Source Voltage | ±30 V |
| Continuous Drain Current (Tc = 25°C) | 22 A |
| Pulsed Drain Current | 66 A |
| Static Drain to Source On Resistance (Typ) | 0.140 Ω |
| Total Gate Charge (Typ) | 45 nC |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction to Case | 0.61 °C/W |
The maximum drain to source voltage is 600 V.
The typical on-resistance is 0.140 Ω at VGS = 10V and ID = 11A.
These MOSFETs fit requirements for AC-DC SMPS, server/telecom power, FPD TV power, ATX power, and industrial power applications.