This document describes the features and characteristics of the CENTRAL SEMICONDUCTOR CMPT5551 NPN silicon transistor, which is designed for high voltage amplifier applications.
The Central Semiconductor CMPT5551 is an NPN silicon transistor manufactured using the epitaxial planar process. It is epoxy molded in a surface mount SOT-23 case and is designed for high voltage amplifier applications. The marking code for the device is 1FF.
| Operating and Storage Junction Temperature | -65 to +150 °C |
|---|---|
| Thermal Resistance | 357 °C/W |
It is designed for high voltage amplifier applications.