This document describes the features and characteristics of the CENTRAL SEMICONDUCTOR CMPT5401 PNP silicon transistor. The transistor is manufactured using the epitaxial planar process and is epoxy molded in a surface mount package. It is designed for high voltage amplifier applications.
The document describes the CENTRAL SEMICONDUCTOR CMPT5401 type as a PNP silicon transistor manufactured by the epitaxial planar process. It is epoxy molded in an SOT-23 surface mount package designed for high voltage amplifier applications, with a marking code of C2L.
The datasheet provides maximum ratings at 25°C, including collector-base and collector-emitter voltages up to 160V and 150V respectively, along with electrical characteristics such as current gain (hFE) and capacitance. It also includes mechanical dimensions for the package.
| Collector-Base Voltage (VcBO) | 160 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 150 V |
| Emitter-Base Voltage (VEBO) | 5.0 V |
| Collector Current (Io) | 500 mA |
| Power Dissipation (Pb) | 350 mW |
| Junction Temperature Range | -65 to +150 °C |
| Thermal Resistance (OJA) | 357 oC/W |
The Marking Code is C2L.
Yes, it is designed for high voltage amplifier applications with a collector-base voltage rating of 160 V.