The document describes the CMPT5179 NPN silicon RF transistor from Central Semiconductor Corp. The transistor is manufactured using the epitaxial planar process and is epoxy molded in a surface mount package. It is designed for low noise, high frequency amplifier, and high output oscillator applications.
The Central Semiconductor CMPT5179 is an NPN silicon RF transistor manufactured using the epitaxial planar process. It is epoxy molded in a surface mount SOT-23 case and is designed for low noise, high frequency amplifier and high output oscillator applications. The marking code for the device is C7H.
| Collector-Base Voltage | 20 V |
|---|---|
| Collector-Emitter Voltage | 12 V |
| Emitter-Base Voltage | 2.5 V |
| Collector Current | 50 mA |
| Power Dissipation | 350 mW |
| Operating Junction Temperature | -65 to +150 °C |
| Thermal Resistance | 357 OC/W |
| Cut-off Frequency | 900 to 1450 MHz |
The marking code is C7H.
It is designed for low noise, high frequency amplifier and high output oscillator applications.